MRF6P18190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-- 1 8
-- 8
-- 1 2
-- 1 6
1920
1760
IRL
Gps
ACPR
IM3
-- 3 4
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout
= 44 Watts
1900
1880
1860
1840
1820
1800
1780
16.5
16.3
VDD=28Vdc
Pout
=44W(Avg.)
IDQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
-- 4 4
28.2
27.8
-- 3 6
-- 3 8
-- 4 2
η
D
, DRAIN
EFFICIENCY (%)
ηD
16.1
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
15.9
15.7
15.6
15.5
16.4
16.2
16
15.8
28
27.6
27.4
-- 4 0
-- 1 0
-- 1 4
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-- 1 8
-- 8
-- 1 2
-- 1 6
1920
1760
IRL
Gps
ACPR
-- 3 0
IM3
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout
= 88 Watts
1900
1880
1860
1840
1820
1800
1780
15.8
15.6
-- 3 2
40.4
39.6
-- 2 6
-- 2 8
η
D
, DRAIN
EFFICIENCY (%)
ηD
15.4
15.3
15.1
15
15.7
15.5
15.2
40
39.2
-- 2 4
-- 1 0
-- 1 4
VDD=28Vdc,Pout
=88W(Avg.)
IDQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two--Tone Power Gain versus
Output Power
13.5
17.5
0.1
IDQ
= 2600 mA
2300 mA
Pout, OUTPUT POWER (WATTS) PEP
17
16
15
10 100
G
ps
, POWER GAIN (dB)
14
2000 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
1
Pout, OUTPUT POWER (WATTS) PEP
100
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
10
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
-- 3 0
16.5
15.5
14.5
1
1700 mA
1400 mA
VDD
= 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, Two--Tone
Measurements, 10 MHz Tone Spacing
IDQ
= 2600 mA
2300 mA
2000 mA
1700 mA
1400 mA
VDD
= 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
300
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
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相关代理商/技术参数
MRF6P21190HR5
功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P21190HR6
功能描述:射频MOSFET电源晶体管 HV6 44W W/CDMA RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P21190HR6_06
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF6P21190HR6_10
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190H_08
制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF6P23190HR5
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P23190HR6
功能描述:射频MOSFET电源晶体管 HV6 2.3GHZ 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6P24190HR5
功能描述:射频MOSFET电源晶体管 2.4GHZ HV6 40W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray