MRF6P18190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-- 1 8
-- 8
-- 1 2
-- 1 6
1920
1760
IRL
Gps
ACPR
IM3
-- 3 4
f, FREQUENCY (MHz)
Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout
= 44 Watts
1900
1880
1860
1840
1820
1800
1780
16.5
16.3
VDD=28Vdc
Pout
=44W(Avg.)
IDQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth
-- 4 4
28.2
27.8
-- 3 6
-- 3 8
-- 4 2
η
D
, DRAIN
EFFICIENCY (%)
ηD
16.1
PAR = 8.5 dB @ 0.01%
Probability (CCDF)
15.9
15.7
15.6
15.5
16.4
16.2
16
15.8
28
27.6
27.4
-- 4 0
-- 1 0
-- 1 4
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IM3 (dBc), ACPR (dBc)
-- 1 8
-- 8
-- 1 2
-- 1 6
1920
1760
IRL
Gps
ACPR
-- 3 0
IM3
f, FREQUENCY (MHz)
Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout
= 88 Watts
1900
1880
1860
1840
1820
1800
1780
15.8
15.6
-- 3 2
40.4
39.6
-- 2 6
-- 2 8
η
D
, DRAIN
EFFICIENCY (%)
ηD
15.4
15.3
15.1
15
15.7
15.5
15.2
40
39.2
-- 2 4
-- 1 0
-- 1 4
VDD=28Vdc,Pout
=88W(Avg.)
IDQ
= 2000 mA, 2--Carrier W--CDMA
10 MHz Carrier Spacing, 3.84 MHz
Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two--Tone Power Gain versus
Output Power
13.5
17.5
0.1
IDQ
= 2600 mA
2300 mA
Pout, OUTPUT POWER (WATTS) PEP
17
16
15
10 100
G
ps
, POWER GAIN (dB)
14
2000 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
1
Pout, OUTPUT POWER (WATTS) PEP
100
-- 3 5
-- 4 0
-- 4 5
-- 5 0
-- 5 5
10
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
-- 3 0
16.5
15.5
14.5
1
1700 mA
1400 mA
VDD
= 28 Vdc, f1 = 1837.5 MHz
f2 = 1847.5 MHz, Two--Tone
Measurements, 10 MHz Tone Spacing
IDQ
= 2600 mA
2300 mA
2000 mA
1700 mA
1400 mA
VDD
= 28 Vdc, f1 = 1837.5 MHz, f2 = 1847.5 MHz
Two--Tone Measurements, 10 MHz Tone Spacing
300
LIFETIME BU
Y
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12